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| RHRU10060 Data Sheet January 2000 File Number 3572.3 100A, 600V Hyperfast Diode The RHRU10060 is a hyperfast diode with soft recovery characteristics (trr < 50ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49069. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . < 50ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RHRU10060 PACKAGE TO-218 BRAND RHRU10060 Packaging JEDEC STYLE TO-218 ANODE NOTE: When ordering, use the entire part number. Symbol K CATHODE (FLANGE) A Absolute Maximum Ratings TC = 25oC RHRU10060 UNITS V V V A 600 600 600 100 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 60oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 200 A 1000 A 210 50 -65 to 175 W mJ oC 1 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 RHRU10060 Electrical Specifications SYMBOL VF TC = 25oC, Unless Otherwise Specified TEST CONDITION IF = 100A IF = 100A, TC = 150oC IR VR = 600V VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s IF = 100A, dIF/dt = 100A/s ta tb RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb . ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. IF = 100A, dIF/dt = 100A/s IF = 100A, dIF/dt = 100A/s MIN TYP 28 18 MAX 2.1 1.7 250 2.0 50 60 0.71 UNITS V V A mA ns ns ns ns oC/W Typical Performance Curves 500 175oC IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 1000 100 100oC 5000 175oC 100 100oC 10 25oC 10 25oC 1 0 0.5 1 1.5 2 2.5 3 1 0 100 200 300 400 500 600 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 RHRU10060 Typical Performance Curves 60 TC = 25oC, dIF/dt = 100A/s 50 t, RECOVERY TIMES (ns) 40 trr 30 20 10 0 ta tb (Continued) IF(AV) , AVERAGE FORWARD CURRENT (A) 120 100 DC 80 60 40 20 0 25 SQ. WAVE 1 10 IF, FORWARD CURRENT (A) 100 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 5. trr TEST CIRCUIT IMAX = 1.6A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 6. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3 |
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